In situ characterization of initial growth of HfO{sub 2}
- Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong)
- Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, New Territories (Hong Kong)
The initial growth of HfO{sub 2} on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO{sub 2} films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO{sub 2} is not completely formed. A continuous usable HfO{sub 2} film with thickness of about 1.2 nm is presented in this work.
- OSTI ID:
- 21175877
- Journal Information:
- Applied Physics Letters, Vol. 94, Issue 3; Other Information: DOI: 10.1063/1.3073863; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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