The formation of light emitting cerium silicates in cerium-doped silicon oxides
- Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4K1 (Canada)
Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N{sub 2} at 1200 deg. C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce{sub 2}Si{sub 2}O{sub 7} or Ce{sub 4.667} (SiO{sub 4}){sub 3}O], the presence of which was confirmed by high resolution transmission electron microscopy.
- OSTI ID:
- 21175847
- Journal Information:
- Applied Physics Letters, Vol. 94, Issue 1; Other Information: DOI: 10.1063/1.3067871; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Luminescence properties of Ce{sup 3+} and Tb{sup 3+} co-doped SiO{sub x}N{sub y} thin films: Prospects for color tunability in silicon-based hosts
Optical and structural properties of Er{sub 2}O{sub 3} films grown by magnetron sputtering