Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy

Cai, Y; Wong, T L; Chan, S K; Sou, I K; Wang, N; Su, D S

doi:10.1063/1.3037024

Title: Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy

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Abstract

Ultrathin ZnSe nanowires grown by Au-catalyzed molecular-beam epitaxy show an interesting growth behavior of diameter dependence of growth rates. The smaller the nanowire diameter, the faster is its growth rate. This growth behavior is totally different from that of the nanowires with diameters greater than 60 nm and cannot be interpreted by the classical theories of the vapor-liquid-solid mechanism. For the Au-catalyzed nanowire growth at low temperatures, we found that the surface and interface incorporation and diffusion of the source atoms at the nanowire tips controlled the growth of ultrathin ZnSe nanowires.

Authors:

Cai, Y; Wong, T L; Chan, S K; Sou, I K; Wang, N ^[1]; Su, D S ^[2]

Department of Physics and the Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong (China)
Department of Inorganic Chemistry, Fritz-Haber Institute of the Max Planck Society, Faradayweg 4-6, 14195 Berlin (Germany)

Publication Date:: Mon Dec 08 00:00:00 EST 2008

OSTI Identifier:: 21175806

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 93; Journal Issue: 23; Other Information: DOI: 10.1063/1.3037024; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; CATALYSIS; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; VAPORS; ZINC SELENIDES

Citation Formats


                    Cai, Y, Wong, T L, Chan, S K, Sou, I K, Wang, N, and Su, D S. Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy.  United States: N. p., 2008. 
        Web.  doi:10.1063/1.3037024.

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                    Cai, Y, Wong, T L, Chan, S K, Sou, I K, Wang, N, & Su, D S. Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy.  United States.  https://doi.org/10.1063/1.3037024

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                    Cai, Y, Wong, T L, Chan, S K, Sou, I K, Wang, N, and Su, D S. 2008.  
        "Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy".  United States.  https://doi.org/10.1063/1.3037024.

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@article{osti_21175806,

  title        = {Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy},

  author       = {Cai, Y and Wong, T L and Chan, S K and Sou, I K and Wang, N and Su, D S},

  abstractNote = {Ultrathin ZnSe nanowires grown by Au-catalyzed molecular-beam epitaxy show an interesting growth behavior of diameter dependence of growth rates. The smaller the nanowire diameter, the faster is its growth rate. This growth behavior is totally different from that of the nanowires with diameters greater than 60 nm and cannot be interpreted by the classical theories of the vapor-liquid-solid mechanism. For the Au-catalyzed nanowire growth at low temperatures, we found that the surface and interface incorporation and diffusion of the source atoms at the nanowire tips controlled the growth of ultrathin ZnSe nanowires.},

  doi          = {10.1063/1.3037024},

  url          = {https://www.osti.gov/biblio/21175806},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 23,

  volume       = 93,

  place        = {United States},

  year         = {Mon Dec 08 00:00:00 EST 2008},

  month        = {Mon Dec 08 00:00:00 EST 2008}

}

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