Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects

Journal Article · Mon Oct 20 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3000061· OSTI ID:21175690

Robertson, J; Zhong, G ^[1]; Telg, H; Thomsen, C ^[2]; Warner, J H; Briggs, G A. D. ^[3]; Dettlaff-Weglikowska, U; Roth, S ^[4]

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1. Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom)
2. Institut fuer Festkoerperphysik, Technische Universitaet Berlin, 10623 Berlin (Germany)
3. Department of Materials, University of Oxford, Oxford OX1 3PH (United Kingdom)
4. Max Planck Institut fuer Festkoerperphysik, D-70569 Stuttgart (Germany)

We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe-Al{sub 2}O{sub 3} thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system gives rise to a broad range of nanotube diameters, with no preferential selectivity of semiconducting tubes, but with at least 1/3 of metallic tubes.

• OSTI ID: 21175690
• Journal Information: Applied Physics Letters, Vol. 93, Issue 16; Other Information: DOI: 10.1063/1.3000061; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CARBON
CATALYSTS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DENSITY
INTEGRATED CIRCUITS
NANOTUBES
PLASMA
THIN FILMS