In situ stress evolution during magnetron sputtering of transition metal nitride thin films

Journal Article · Mon Sep 15 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2985814· OSTI ID:21175582

Abadias, G; Guerin, Ph ^[1]

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1. Laboratoire PHYMAT, UMR 6630, Universite de Poitiers-CNRS, SP2MI, Teleport 2, Bd Marie et Pierre Curie, 86962 Chasseneuil-Futuroscope (France)

Stress evolution during reactive magnetron sputtering of TiN, ZrN, and TiZrN layers was studied using real-time wafer curvature measurements. The presence of stress gradients is revealed, as the result of two kinetically competing stress generation mechanisms: atomic peening effect, inducing compressive stress, and void formation, leading to a tensile stress regime predominant at higher film thickness. No stress relaxation is detected during growth interrupt in both regimes. A change from compressive to tensile stress is evidenced with increasing film thickness, Ti content, sputtering pressure, and decreasing bias voltage.

• OSTI ID: 21175582
• Journal Information: Applied Physics Letters, Vol. 93, Issue 11; Other Information: DOI: 10.1063/1.2985814; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPRESSION STRENGTH
CRYSTAL GROWTH
DEPOSITION
ELECTRIC POTENTIAL
LAYERS
SHOT PEENING
SPUTTERING
STRESS RELAXATION
STRESSES
THIN FILMS
TITANIUM NITRIDES
TRANSITION ELEMENTS
ZIRCONIUM NITRIDES