Structural, Optical and Electrical Properties of n-type GaN on Si (111) Grown by RF-plasma assisted Molecular Beam Epitaxy

Journal Article · Tue May 20 00:00:00 EDT 2008 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2940660· OSTI ID:21143313

Chin, C W; Hassan, Z; Yam, F K ^[1]

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1. Nano-Optoelectronics Research and Tecnology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

In this paper, we present the study of the structural, optical and electrical of n-type GaN grown on silicon (111) by RF plasma-assisted molecular beam epitaxy (RF-MBE). X-ray diffraction (XRD) measurement reveals that the GaN was epitaxially grown on silicon. For the photoluminescence (PL) measurement, a sharp and intense peak at 364.5 nm indicates that the sample is of high optical quality. Hall effect measurement shows that the film has a carrier concentration of 3.28x10{sup 19} cm{sup -3}. The surface of the n-type GaN was smooth and no any cracks and pits.

• OSTI ID: 21143313
• Journal Information: AIP Conference Proceedings, Vol. 1017, Issue 1; Conference: PERFIK 2007: National physics conference 2007 on current issues of physics in Malaysia, Kuala Terengganu (Malaysia), 26-28 Dec 2007; Other Information: DOI: 10.1063/1.2940660; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER DENSITY
CHARGE CARRIERS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
EMISSION SPECTROSCOPY
GALLIUM NITRIDES
HALL EFFECT
MOLECULAR BEAM EPITAXY
N-TYPE CONDUCTORS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PLASMA
SILICON
SURFACES
X-RAY DIFFRACTION