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Title: Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces

Abstract

The origin of a not yet understood concentration peak, which is generally measured at the surface of aluminum-doped p{sup +} regions produced in a conventional screen-printing process is investigated. Our findings provide clear experimental evidence that the concentration peak is due to the microscopic structures formed at the silicon surface during the firing process. To characterize the microscopic nature of the islands (lateral dimensions of 1-3 {mu}m) and line networks of self-assembled nanostructures (lateral dimension of {<=}50 nm), transmission electron microscopy, scanning electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis are combined. Aluminum inclusions are detected 50 nm below the surface of the islands and crystalline aluminum precipitates of {<=}7 nm in diameter are found within the bulk of the islands. In addition, aluminum inclusions (lateral dimension of {approx}30 nm) are found within the bulk of the self-assembled line networks.

Authors:
; ;  [1]; ;  [2]
  1. Institut fuer Solarenergieforschung Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal (Germany)
  2. IV. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hund-Platz 1, D-37073 Goettingen (Germany)
Publication Date:
OSTI Identifier:
21137452
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 104; Journal Issue: 4; Other Information: DOI: 10.1063/1.2963192; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; DOPED MATERIALS; NANOSTRUCTURES; PRECIPITATION; SCANNING ELECTRON MICROSCOPY; SCREEN PRINTING; SEMICONDUCTOR MATERIALS; SILICON; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Bock, Robert, Schmidt, Jan, Brendel, Rolf, Schuhmann, Henning, and Seibt, Michael. Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces. United States: N. p., 2008. Web. doi:10.1063/1.2963192.
Bock, Robert, Schmidt, Jan, Brendel, Rolf, Schuhmann, Henning, & Seibt, Michael. Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces. United States. https://doi.org/10.1063/1.2963192
Bock, Robert, Schmidt, Jan, Brendel, Rolf, Schuhmann, Henning, and Seibt, Michael. 2008. "Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces". United States. https://doi.org/10.1063/1.2963192.
@article{osti_21137452,
title = {Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces},
author = {Bock, Robert and Schmidt, Jan and Brendel, Rolf and Schuhmann, Henning and Seibt, Michael},
abstractNote = {The origin of a not yet understood concentration peak, which is generally measured at the surface of aluminum-doped p{sup +} regions produced in a conventional screen-printing process is investigated. Our findings provide clear experimental evidence that the concentration peak is due to the microscopic structures formed at the silicon surface during the firing process. To characterize the microscopic nature of the islands (lateral dimensions of 1-3 {mu}m) and line networks of self-assembled nanostructures (lateral dimension of {<=}50 nm), transmission electron microscopy, scanning electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis are combined. Aluminum inclusions are detected 50 nm below the surface of the islands and crystalline aluminum precipitates of {<=}7 nm in diameter are found within the bulk of the islands. In addition, aluminum inclusions (lateral dimension of {approx}30 nm) are found within the bulk of the self-assembled line networks.},
doi = {10.1063/1.2963192},
url = {https://www.osti.gov/biblio/21137452}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 4,
volume = 104,
place = {United States},
year = {Fri Aug 15 00:00:00 EDT 2008},
month = {Fri Aug 15 00:00:00 EDT 2008}
}