In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
- ISOM and Dpt. de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain)
- Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf plasma-assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity oscillations during reflection high-energy electron diffraction measurements facilitated complementary evaluation of the decomposition rate and highlighted a layer-by-layer decomposition mode in vacuum. Exposure to active nitrogen, either under vacuum or during growth under N-rich growth conditions, strongly reduced the GaN losses due to GaN decomposition.
- OSTI ID:
- 21137424
- Journal Information:
- Journal of Applied Physics, Vol. 104, Issue 3; Other Information: DOI: 10.1063/1.2968442; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy
Ex situ and in situ methods for oxide and carbon removal from AlN and GaN surfaces