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Title: Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

Abstract

The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7x10{sup 20} cm{sup -3}, leading to a hole concentration as high as 4.5x10{sup 18} cm{sup -3} at room temperature, with a mobility of 1.1 cm{sup 2} V{sup -1} s{sup -1} and a resistivity of 1.3 {omega} cm. At 580 K, the corresponding values were 2.6x10{sup 19} cm{sup -3}, 1.2 cm{sup 2} V{sup -1} s{sup -1}, and 0.21 {omega} cm, respectively. Even under strong white light, the sample remained p-type with little change in the electrical parameters.

Authors:
;  [1];  [2]; ;  [3]
  1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
  2. Electrical and Computer Engineering Department, Old Dominion University, Norfolk, Virginia 23529 (United States)
  3. Semiconductor Research Center, Wright State University, Dayton, Ohio 45435 (United States)
Publication Date:
OSTI Identifier:
21137412
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 104; Journal Issue: 2; Other Information: DOI: 10.1063/1.2953089; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DOPED MATERIALS; GALLIUM NITRIDES; HOLE MOBILITY; HOLES; MAGNESIUM; MODULATION; MOLECULAR BEAM EPITAXY; PLASMA; SAPPHIRE; SEMICONDUCTOR MATERIALS; SHUTTERS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; VISIBLE RADIATION

Citation Formats

Burnham, Shawn D, Doolittle, W Alan, Namkoong, Gon, Look, David C, and Clafin, Bruce. Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy. United States: N. p., 2008. Web. doi:10.1063/1.2953089.
Burnham, Shawn D, Doolittle, W Alan, Namkoong, Gon, Look, David C, & Clafin, Bruce. Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy. United States. https://doi.org/10.1063/1.2953089
Burnham, Shawn D, Doolittle, W Alan, Namkoong, Gon, Look, David C, and Clafin, Bruce. 2008. "Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy". United States. https://doi.org/10.1063/1.2953089.
@article{osti_21137412,
title = {Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy},
author = {Burnham, Shawn D and Doolittle, W Alan and Namkoong, Gon and Look, David C and Clafin, Bruce},
abstractNote = {The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7x10{sup 20} cm{sup -3}, leading to a hole concentration as high as 4.5x10{sup 18} cm{sup -3} at room temperature, with a mobility of 1.1 cm{sup 2} V{sup -1} s{sup -1} and a resistivity of 1.3 {omega} cm. At 580 K, the corresponding values were 2.6x10{sup 19} cm{sup -3}, 1.2 cm{sup 2} V{sup -1} s{sup -1}, and 0.21 {omega} cm, respectively. Even under strong white light, the sample remained p-type with little change in the electrical parameters.},
doi = {10.1063/1.2953089},
url = {https://www.osti.gov/biblio/21137412}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 2,
volume = 104,
place = {United States},
year = {Tue Jul 15 00:00:00 EDT 2008},
month = {Tue Jul 15 00:00:00 EDT 2008}
}