Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
- Electrical and Computer Engineering Department, Old Dominion University, Norfolk, Virginia 23529 (United States)
- Semiconductor Research Center, Wright State University, Dayton, Ohio 45435 (United States)
The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7x10{sup 20} cm{sup -3}, leading to a hole concentration as high as 4.5x10{sup 18} cm{sup -3} at room temperature, with a mobility of 1.1 cm{sup 2} V{sup -1} s{sup -1} and a resistivity of 1.3 {omega} cm. At 580 K, the corresponding values were 2.6x10{sup 19} cm{sup -3}, 1.2 cm{sup 2} V{sup -1} s{sup -1}, and 0.21 {omega} cm, respectively. Even under strong white light, the sample remained p-type with little change in the electrical parameters.
- OSTI ID:
- 21137412
- Journal Information:
- Journal of Applied Physics, Vol. 104, Issue 2; Other Information: DOI: 10.1063/1.2953089; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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