Study of tungsten filament aging in hot-wire chemical vapor deposition with silacyclobutane as a source gas and the H{sub 2} etching effect

Ling, Tong; Sveen, Chris E; Yujun, Shi

doi:10.1063/1.2949278

Title: Study of tungsten filament aging in hot-wire chemical vapor deposition with silacyclobutane as a source gas and the H{sub 2} etching effect

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Abstract

The tungsten filament aging when using silacyclobutane (SCB) as a source gas in a hot-wire chemical vapor deposition reactor was systematically studied by the characterization of surface morphology using scanning electron microscopy and the chemical composition analysis of the filament surfaces using Auger electron spectroscopy. It is shown that filament aging involves the formation of silicides and under more severe conditions, a pure silicon deposit. At low pressures of SCB samples, e.g., 0.06 and 0.03 Torr, only Si{sub 3}W{sub 5} alloy was formed. Silicon-rich silicide, Si{sub 2}W, was found when using a higher pressure of SCB at 0.12 Torr. At the high SCB pressure of 0.12 Torr and low temperatures, pure silicon was deposited on the W filament surface. It is also demonstrated that H{sub 2} can etch the aged filament at high temperatures above 1900 deg. C. The etching products detected by the 10.5 eV vacuum ultraviolet laser single photon ionization/time-of-flight mass spectrometer include SiH{sub 4}, SiCH{sub x} (x=2-5), and SiC{sub 2}H{sub y} (y=4-7)

Authors:

Ling, Tong; Sveen, Chris E; Yujun, Shi ^[1]

Department of Chemistry, University of Calgary, Calgary, Alberta T2N 1N4 (Canada)

Publication Date:: Sun Jun 15 00:00:00 EDT 2008

OSTI Identifier:: 21137360

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 103; Journal Issue: 12; Other Information: DOI: 10.1063/1.2949278; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; AGING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; ETCHING; FILAMENTS; HYDROGEN; PRESSURE RANGE PA; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILANES; SILICIDES; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; TIME-OF-FLIGHT MASS SPECTROMETERS; TUNGSTEN; ULTRAVIOLET RADIATION

Citation Formats


                    Ling, Tong, Sveen, Chris E, and Yujun, Shi. Study of tungsten filament aging in hot-wire chemical vapor deposition with silacyclobutane as a source gas and the H{sub 2} etching effect.  United States: N. p., 2008. 
        Web.  doi:10.1063/1.2949278.

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                    Ling, Tong, Sveen, Chris E, & Yujun, Shi. Study of tungsten filament aging in hot-wire chemical vapor deposition with silacyclobutane as a source gas and the H{sub 2} etching effect.  United States.  https://doi.org/10.1063/1.2949278

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                    Ling, Tong, Sveen, Chris E, and Yujun, Shi. 2008.  
        "Study of tungsten filament aging in hot-wire chemical vapor deposition with silacyclobutane as a source gas and the H{sub 2} etching effect".  United States.  https://doi.org/10.1063/1.2949278.

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@article{osti_21137360,

  title        = {Study of tungsten filament aging in hot-wire chemical vapor deposition with silacyclobutane as a source gas and the H{sub 2} etching effect},

  author       = {Ling, Tong and Sveen, Chris E and Yujun, Shi},

  abstractNote = {The tungsten filament aging when using silacyclobutane (SCB) as a source gas in a hot-wire chemical vapor deposition reactor was systematically studied by the characterization of surface morphology using scanning electron microscopy and the chemical composition analysis of the filament surfaces using Auger electron spectroscopy. It is shown that filament aging involves the formation of silicides and under more severe conditions, a pure silicon deposit. At low pressures of SCB samples, e.g., 0.06 and 0.03 Torr, only Si{sub 3}W{sub 5} alloy was formed. Silicon-rich silicide, Si{sub 2}W, was found when using a higher pressure of SCB at 0.12 Torr. At the high SCB pressure of 0.12 Torr and low temperatures, pure silicon was deposited on the W filament surface. It is also demonstrated that H{sub 2} can etch the aged filament at high temperatures above 1900 deg. C. The etching products detected by the 10.5 eV vacuum ultraviolet laser single photon ionization/time-of-flight mass spectrometer include SiH{sub 4}, SiCH{sub x} (x=2-5), and SiC{sub 2}H{sub y} (y=4-7)},

  doi          = {10.1063/1.2949278},

  url          = {https://www.osti.gov/biblio/21137360},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 12,

  volume       = 103,

  place        = {United States},

  year         = {Sun Jun 15 00:00:00 EDT 2008},

  month        = {Sun Jun 15 00:00:00 EDT 2008}

}

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