Carrier relaxation through two-electron process during photoconduction in highly UV sensitive quasi-one-dimensional ZnO nanowires

Journal Article · Mon Aug 04 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2968131· OSTI ID:21124060

Bera, A; Basak, D ^[1]

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1. Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

We have investigated the carrier relaxation process during photoconduction in quasi-one-dimensional (Q1D) ZnO nanowires (NWs) of diameters 29-36 nm on different substrates using photocurrent transient measurements. Ultraviolet (UV) sensitive NWs show around three to four orders of change in the photo-to-dark current ratio. Under steady UV illumination, the photocarrier relaxation occurs through two-electron process--carrier loss due to the trapping by the surface states and recombination at the deep defect states. The results demonstrate that the carrier relaxation during photoconduction in Q1D NWs of diameter comparable to the Debye length is also dominated by the surface states.

• OSTI ID: 21124060
• Journal Information: Applied Physics Letters, Vol. 93, Issue 5; Other Information: DOI: 10.1063/1.2968131; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHARGE CARRIERS
DEBYE LENGTH
ELECTRONS
PHOTOCONDUCTIVITY
QUANTUM WIRES
RECOMBINATION
RELAXATION
RELAXATION TIME
SEMICONDUCTOR MATERIALS
SUBSTRATES
ULTRAVIOLET RADIATION
ZINC OXIDES