Local structure of indium oxynitride from x-ray absorption spectroscopy

Journal Article · Mon Aug 04 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2965802· OSTI ID:21124057

T-Thienprasert, J; Onkaw, D; Rujirawat, S; Limpijumnong, S ^[1]; Nukeaw, J; Sungthong, A ^[2]; Porntheeraphat, S ^[3]; Singkarat, S ^[4]

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1. School of Physics, Suranaree University of Technology and National Synchrotron Research Center, Nakhon Ratchasima 30000 (Thailand)
2. Nanotechnology Research Center of KMITL and Department of Applied Physics, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520 (Thailand)
3. Thai Microelectronics Center, National Electronics and Computer Technology Center, Pathumthani 12120 (Thailand)
4. Fast Neutron Research Facility, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

Synchrotron x-ray absorption near edge structures (XANES) measurements of In L{sub 3} edge is used in conjunction with first principles calculations to characterize rf magnetron sputtered indium oxynitride at different O contents. Good agreement between the measured and the independently calculated spectra are obtained. Calculations show that the XANES spectra of this alloy are sensitive to the coordination numbers of the In atoms, i.e., fourfold for indium nitride-like structures and sixfold for indium oxide-like structures, but not to the substitution of nearest neighbor N by O or vice versa.

• OSTI ID: 21124057
• Journal Information: Applied Physics Letters, Vol. 93, Issue 5; Other Information: DOI: 10.1063/1.2965802; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ABSORPTION SPECTROSCOPY
CRYSTAL STRUCTURE
INDIUM NITRIDES
INDIUM OXIDES
SPECTRA
SPUTTERING
SURFACE COATING
SYNCHROTRONS
X-RAY SPECTROSCOPY