skip to main content

Title: Step-induced misorientation of GaN grown on r-plane sapphire

In the growth of nonpolar (1120) a-plane GaN on r-plane (1102) sapphire by plasma-assisted molecular beam epitaxy, misoriented crystallites are observed close to the substrate. They have average diameter {approx}10 nm and are oriented with the (0001){sub GaN} plane approximately parallel to the (2113){sub sapph.} plane and [0110]{sub GaN} parallel [1101]{sub sapph.}. This semipolar orientation is promoted by a low misfit (2.4%) between (1011){sub GaN} and (1210){sub sapph.} planes. Its introduction, after nitridation treatment, is due to GaN nucleation on (2113){sub sapph.} step facets inclined at 26 deg. relative to the r-plane. Two variants are observed, leading to twinning when they abut inside the epilayer.
Authors:
; ; ;  [1] ; ;  [2]
  1. Physics Department, Aristotle University, GR 54124 Thessaloniki (Greece)
  2. Microelectronics Research Group, Department of Physics, University of Crete, P.O. Box 2208, GR 71003, and IESL, FORTH, P.O. Box 1527, GR 71110 Heraklion (Greece)
Publication Date:
OSTI Identifier:
21123967
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 93; Journal Issue: 2; Other Information: DOI: 10.1063/1.2953438; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NITRIDATION; NUCLEATION; PLASMA; PROCESSING; SAPPHIRE; SEMICONDUCTOR MATERIALS