Step-induced misorientation of GaN grown on r-plane sapphire
Abstract
In the growth of nonpolar (1120) a-plane GaN on r-plane (1102) sapphire by plasma-assisted molecular beam epitaxy, misoriented crystallites are observed close to the substrate. They have average diameter {approx}10 nm and are oriented with the (0001){sub GaN} plane approximately parallel to the (2113){sub sapph.} plane and [0110]{sub GaN} parallel [1101]{sub sapph.}. This semipolar orientation is promoted by a low misfit (2.4%) between (1011){sub GaN} and (1210){sub sapph.} planes. Its introduction, after nitridation treatment, is due to GaN nucleation on (2113){sub sapph.} step facets inclined at 26 deg. relative to the r-plane. Two variants are observed, leading to twinning when they abut inside the epilayer.
- Authors:
-
- Physics Department, Aristotle University, GR 54124 Thessaloniki (Greece)
- Microelectronics Research Group, Department of Physics, University of Crete, P.O. Box 2208, GR 71003, and IESL, FORTH, P.O. Box 1527, GR 71110 Heraklion (Greece)
- Publication Date:
- OSTI Identifier:
- 21123967
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 93; Journal Issue: 2; Other Information: DOI: 10.1063/1.2953438; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CRYSTAL GROWTH; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NITRIDATION; NUCLEATION; PLASMA; PROCESSING; SAPPHIRE; SEMICONDUCTOR MATERIALS
Citation Formats
Smalc-Koziorowska, J, Dimitrakopulos, G P, Sahonta, S -L, Komninou, Ph, Tsiakatouras, G, and Georgakilas, A. Step-induced misorientation of GaN grown on r-plane sapphire. United States: N. p., 2008.
Web. doi:10.1063/1.2953438.
Smalc-Koziorowska, J, Dimitrakopulos, G P, Sahonta, S -L, Komninou, Ph, Tsiakatouras, G, & Georgakilas, A. Step-induced misorientation of GaN grown on r-plane sapphire. United States. https://doi.org/10.1063/1.2953438
Smalc-Koziorowska, J, Dimitrakopulos, G P, Sahonta, S -L, Komninou, Ph, Tsiakatouras, G, and Georgakilas, A. 2008.
"Step-induced misorientation of GaN grown on r-plane sapphire". United States. https://doi.org/10.1063/1.2953438.
@article{osti_21123967,
title = {Step-induced misorientation of GaN grown on r-plane sapphire},
author = {Smalc-Koziorowska, J and Dimitrakopulos, G P and Sahonta, S -L and Komninou, Ph and Tsiakatouras, G and Georgakilas, A},
abstractNote = {In the growth of nonpolar (1120) a-plane GaN on r-plane (1102) sapphire by plasma-assisted molecular beam epitaxy, misoriented crystallites are observed close to the substrate. They have average diameter {approx}10 nm and are oriented with the (0001){sub GaN} plane approximately parallel to the (2113){sub sapph.} plane and [0110]{sub GaN} parallel [1101]{sub sapph.}. This semipolar orientation is promoted by a low misfit (2.4%) between (1011){sub GaN} and (1210){sub sapph.} planes. Its introduction, after nitridation treatment, is due to GaN nucleation on (2113){sub sapph.} step facets inclined at 26 deg. relative to the r-plane. Two variants are observed, leading to twinning when they abut inside the epilayer.},
doi = {10.1063/1.2953438},
url = {https://www.osti.gov/biblio/21123967},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 2,
volume = 93,
place = {United States},
year = {Mon Jul 14 00:00:00 EDT 2008},
month = {Mon Jul 14 00:00:00 EDT 2008}
}
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