Preparation and characterization of (001)- and (110)-oriented 0.6FeTiO{sub 3}{center_dot}0.4Fe{sub 2}O{sub 3} films for room temperature magnetic semiconductors

Journal Article · Mon Jun 23 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2951589· OSTI ID:21120864

Takada, Yusuke; Nakanishi, Makoto; Fujii, Tatsuo; Takada, Jun ^[1]

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1. Department of Material Chemistry, Graduate School of Natural Science and Technology, Okayama University, Tsushimanaka 3-1-1, Okayama 700-8530 (Japan)

Thin films of ilmenite-hematite solid solution 0.6FeTiO{sub 3}{center_dot}0.4Fe{sub 2}O{sub 3} were prepared on {alpha}-Al{sub 2}O{sub 3} (001) and (110) single-crystalline substrates. The oxide phases formed in the thin films strongly depended on the oxygen partial pressure (P{sub O{sub 2}}) during deposition. At P{sub O{sub 2}}=1.3x10{sup -3} Pa, regardless of thesubstrate orientation, well-ordered 0.6FeTiO{sub 3}{center_dot}0.4Fe{sub 2}O{sub 3} films with R3 symmetry were epitaxially formed. Large saturation magnetization at room temperature was observed in both (001)- and (110)-oriented films. The differences in the magnetization and electrical resistivity curves between the (001)- and (110)-oriented films indicated the anisotropic nature of 0.6FeTiO{sub 3}{center_dot}0.4Fe{sub 2}O{sub 3}.

• OSTI ID: 21120864
• Journal Information: Applied Physics Letters, Vol. 92, Issue 25; Other Information: DOI: 10.1063/1.2951589; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ANISOTROPY
CRYSTAL GROWTH
DEPOSITION
ELECTRIC CONDUCTIVITY
EPITAXY
FERRIMAGNETIC MATERIALS
HEMATITE
ILMENITE
IRON COMPOUNDS
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MONOCRYSTALS
OXYGEN
PARTIAL PRESSURE
SOLID SOLUTIONS
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TITANATES