1.55 {mu}m GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

Journal Article · Mon Mar 17 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2898507· OSTI ID:21120617

Tan, K H; Yoon, S F; Loke, W K; Wicaksono, S; Xu, Z; Ng, T K; Lew, K L ^[1]; Saadsaoud, N; Zegaoui, M; Decoster, D ^[2]; Chazelas, J ^[3]

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1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
2. Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, Universite des Sciences et Technologies de Lille BP 60069, 59652 Villeneuve d'Ascq Cedex (France)
3. Thales Airborne Systems, 2 Avenue Gay Lussac, 78852 Elancourt (France)

We demonstrate a 1.55 {mu}m GaAs/GaNAsSb/GaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAs/GaAs system. The 0.4-{mu}m-thick GaNAsSb guiding layer contains {approx}3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was measured from 800 to 1700 nm. The GaNAsSb layer has a refractive index value of 3.42 at 1.55 {mu}m wavelength. The propagation loss measured using the Fabry-Perot resonance method was found to be affected by nitrogen-related defect absorption.

• OSTI ID: 21120617
• Journal Information: Applied Physics Letters, Vol. 92, Issue 11; Other Information: DOI: 10.1063/1.2898507; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTRA
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
ENERGY GAP
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITROGEN
RADIOWAVE RADIATION
REFRACTIVE INDEX
SEMICONDUCTOR MATERIALS