skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of a metallic gate on the energy levels of a shallow donor

Abstract

We have investigated the effect of a metallic gate on the bound states of a shallow donor located near the gate. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anticrossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity.

Authors:
; ;  [1];  [1]
  1. Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen (Belgium)
Publication Date:
OSTI Identifier:
21120563
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 92; Journal Issue: 8; Other Information: DOI: 10.1063/1.2888742; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BOUND STATE; ELECTRIC FIELDS; ELECTRONS; ENERGY LEVELS; ENERGY SPECTRA; IMPURITIES

Citation Formats

Slachmuylders, A F, Partoens, B, Peeters, F M, Magnus, W, and Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven. Effect of a metallic gate on the energy levels of a shallow donor. United States: N. p., 2008. Web. doi:10.1063/1.2888742.
Slachmuylders, A F, Partoens, B, Peeters, F M, Magnus, W, & Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven. Effect of a metallic gate on the energy levels of a shallow donor. United States. https://doi.org/10.1063/1.2888742
Slachmuylders, A F, Partoens, B, Peeters, F M, Magnus, W, and Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven. 2008. "Effect of a metallic gate on the energy levels of a shallow donor". United States. https://doi.org/10.1063/1.2888742.
@article{osti_21120563,
title = {Effect of a metallic gate on the energy levels of a shallow donor},
author = {Slachmuylders, A F and Partoens, B and Peeters, F M and Magnus, W and Interuniversity Microelectronics Centre, Kapeldreef 75, B-3001 Leuven},
abstractNote = {We have investigated the effect of a metallic gate on the bound states of a shallow donor located near the gate. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anticrossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity.},
doi = {10.1063/1.2888742},
url = {https://www.osti.gov/biblio/21120563}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 92,
place = {United States},
year = {Mon Feb 25 00:00:00 EST 2008},
month = {Mon Feb 25 00:00:00 EST 2008}
}