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Title: Arsenic {delta}-doped HgTe/HgCdTe superlattices grown by molecular beam epitaxy

Abstract

Arsenic incorporation in HgTe/Hg{sub 0.05}Cd{sub 0.95}Te superlattices grown by molecular beam epitaxy (MBE) is reported. The incorporation was carried out by a {delta}-doping approach where arsenic was incorporated during MBE growth as acceptors. The superlattices were characterized via high resolution x-ray diffraction, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, and magnetotransport Hall measurements coupled with the quantitative mobility spectrum analysis algorithm.

Authors:
; ; ; ;  [1];  [2]
  1. School of EECE, University of Western Australia, Crawley, Western Australia 6009 (Australia)
  2. Physikalisches Institut der Universitat Wuerzburg, Wuerzburg 97070 (Germany)
Publication Date:
OSTI Identifier:
21120560
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 92; Journal Issue: 8; Other Information: DOI: 10.1063/1.2888967; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALGORITHMS; ARSENIC; CADMIUM TELLURIDES; CARRIER MOBILITY; CRYSTAL GROWTH; DOPED MATERIALS; FOURIER TRANSFORM SPECTROMETERS; FOURIER TRANSFORMATION; HALL EFFECT; INFRARED SPECTRA; ION MICROPROBE ANALYSIS; MASS SPECTRA; MASS SPECTROSCOPY; MERCURY TELLURIDES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SUPERLATTICES; X-RAY DIFFRACTION

Citation Formats

Tsen, G K. O., Musca, C A, Dell, J M, Antoszewski, J, Faraone, L, and Becker, C R. Arsenic {delta}-doped HgTe/HgCdTe superlattices grown by molecular beam epitaxy. United States: N. p., 2008. Web. doi:10.1063/1.2888967.
Tsen, G K. O., Musca, C A, Dell, J M, Antoszewski, J, Faraone, L, & Becker, C R. Arsenic {delta}-doped HgTe/HgCdTe superlattices grown by molecular beam epitaxy. United States. https://doi.org/10.1063/1.2888967
Tsen, G K. O., Musca, C A, Dell, J M, Antoszewski, J, Faraone, L, and Becker, C R. 2008. "Arsenic {delta}-doped HgTe/HgCdTe superlattices grown by molecular beam epitaxy". United States. https://doi.org/10.1063/1.2888967.
@article{osti_21120560,
title = {Arsenic {delta}-doped HgTe/HgCdTe superlattices grown by molecular beam epitaxy},
author = {Tsen, G K. O. and Musca, C A and Dell, J M and Antoszewski, J and Faraone, L and Becker, C R},
abstractNote = {Arsenic incorporation in HgTe/Hg{sub 0.05}Cd{sub 0.95}Te superlattices grown by molecular beam epitaxy (MBE) is reported. The incorporation was carried out by a {delta}-doping approach where arsenic was incorporated during MBE growth as acceptors. The superlattices were characterized via high resolution x-ray diffraction, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, and magnetotransport Hall measurements coupled with the quantitative mobility spectrum analysis algorithm.},
doi = {10.1063/1.2888967},
url = {https://www.osti.gov/biblio/21120560}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 92,
place = {United States},
year = {Mon Feb 25 00:00:00 EST 2008},
month = {Mon Feb 25 00:00:00 EST 2008}
}