1.59 {mu}m room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates
- CNR-IMEM Institute, Parco delle Scienze 37a, I-43100 Parma (Italy)
We present design, preparation by molecular beam epitaxy, and characterization by photoluminescence of long-wavelength emitting, strain-engineered quantum dot nanostructures grown on GaAs, with InGaAs confining layers and additional InAlAs barriers embedding InAs dots. Quantum dot strain induced by metamorphic lower confining layers is instrumental to redshift the emission, while a-few-nanometer thick InAlAs barriers allow to significantly increase the activation energy of carriers' thermal escape. This approach results in room temperature emission at 1.59 {mu}m and, therefore, is a viable method to achieve efficient emission in the 1.55 {mu}m window and beyond from quantum dots grown on GaAs substrates.
- OSTI ID:
- 21102041
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 21; Other Information: DOI: 10.1063/1.2937095; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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