On the origin of photoluminescence in indium oxide octahedron structures
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India)
- Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)
- Department of Chemistry and Chemical Biology, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States)
A sixfold decrease in photoluminescence signal intensity at 590 nm with increase in deposition time from 3 to 12 h has been observed in single crystalline indium oxide octahedron structures grown by vapor-phase evaporation method. Electron paramagnetic resonance and energy dispersive x-ray analysis confirm that the concentration of oxygen vacancies increases with deposition time. These results are contrary to the previous reports where oxygen vacancies were shown to be responsible for photoluminescence in indium oxide structures. Our results indicate that indium interstitials and their associated complex defects other than oxygen vacancies are responsible for the photoluminescence in In{sub 2}O{sub 3} microstructures.
- OSTI ID:
- 21102007
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 17; Other Information: DOI: 10.1063/1.2910501; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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