Electric-field effect on the spin-dependent resonance tunneling
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- St. Petersburg State Technical University (Russian Federation)
A theory of spin-dependent resonance tunneling through a double-barrier heterostructure in the presence of an electric field is developed. Spin-orbit interaction is taken into account by introducing the Dresselhaus term into the effective Hamiltonian. The possibility of fabricating the spin detectors and injectors based on a GaAlSb nonmagnetic semiconductor heterostructure controlled by electric field is analyzed.
- OSTI ID:
- 21088628
- Journal Information:
- Semiconductors, Vol. 40, Issue 12; Other Information: DOI: 10.1134/S1063782606120062; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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