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Title: The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures

Abstract

The effect of 1-MeV neutrons on the photoelectric parameters of ITO-GaSe heterostructures was studied. It is shown that the observed variations in the current-voltage characteristics are caused by the effect of penetrating radiation on both components of the structure, which brings about an increase in the resistance of the heterostructures. The presence of exciton fine structure in the photosensitivity spectra after irradiation indicates that GaSe retains high structural quality notwithstanding the introduced radiation defects. The results obtained are accounted for by spatial redistribution of doping impurity in GaSe and structural changes in the ITO films.

Authors:
 [1]; ; ;  [2]; ; ; ;  [1]
  1. National Academy of Sciences of Ukraine, Institute of Nuclear Research (Ukraine)
  2. National Academy of Sciences of Ukraine, Chernovtsy Branch, Frantsevich Institute of Problems in Materials Science (Ukraine)
Publication Date:
OSTI Identifier:
21088063
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 41; Journal Issue: 5; Other Information: DOI: 10.1134/S1063782607050144; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FILMS; FINE STRUCTURE; GALLIUM SELENIDES; IRRADIATION; MEV RANGE 01-10; NEUTRON BEAMS; NEUTRONS; PHOTOSENSITIVITY; PHYSICAL RADIATION EFFECTS; SPECTRA

Citation Formats

Kovalyuk, Z. D., Litovchenko, P G, Politanska, O A, Sydor, O N, Katerynchuk, V N, Lastovetsky, V F, Litovchenko, O P, Dubovoy, V K, and Polivtsev, L A. The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures. United States: N. p., 2007. Web. doi:10.1134/S1063782607050144.
Kovalyuk, Z. D., Litovchenko, P G, Politanska, O A, Sydor, O N, Katerynchuk, V N, Lastovetsky, V F, Litovchenko, O P, Dubovoy, V K, & Polivtsev, L A. The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures. United States. https://doi.org/10.1134/S1063782607050144
Kovalyuk, Z. D., Litovchenko, P G, Politanska, O A, Sydor, O N, Katerynchuk, V N, Lastovetsky, V F, Litovchenko, O P, Dubovoy, V K, and Polivtsev, L A. 2007. "The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures". United States. https://doi.org/10.1134/S1063782607050144.
@article{osti_21088063,
title = {The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures},
author = {Kovalyuk, Z. D. and Litovchenko, P G and Politanska, O A and Sydor, O N and Katerynchuk, V N and Lastovetsky, V F and Litovchenko, O P and Dubovoy, V K and Polivtsev, L A},
abstractNote = {The effect of 1-MeV neutrons on the photoelectric parameters of ITO-GaSe heterostructures was studied. It is shown that the observed variations in the current-voltage characteristics are caused by the effect of penetrating radiation on both components of the structure, which brings about an increase in the resistance of the heterostructures. The presence of exciton fine structure in the photosensitivity spectra after irradiation indicates that GaSe retains high structural quality notwithstanding the introduced radiation defects. The results obtained are accounted for by spatial redistribution of doping impurity in GaSe and structural changes in the ITO films.},
doi = {10.1134/S1063782607050144},
url = {https://www.osti.gov/biblio/21088063}, journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 41,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}