skip to main content

Title: Electronic properties of single-crystal diamonds heavily doped with boron

Single-crystal diamonds with characteristic sizes of 2-7 mm doped with boron in the concentration range 10{sup 19}-10{sup 20} cm{sup -3} have been grown by the temperature gradient method at high static pressures. The temperature dependence of the resistance R of the synthesized single crystals has been measured in the range 0.5 K < T < 297 K. An activated dependence R(T) with an activation energy of about 50 meV is observed in the range from room temperature to T {approx} 200 K. At temperatures below approximately 50 K, the temperature dependence of the conductivity for heavily doped crystals is proportional to T{sup 1/2}, which is characteristic of degenerate semiconductors with a high number of defects.
Authors:
; ; ; ;  [1] ; ; ; ;  [2]
  1. Technological Institute for Superhard and Novel Carbon Materials (Russian Federation)
  2. Moscow State University (Russian Federation)
Publication Date:
OSTI Identifier:
21072496
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Experimental and Theoretical Physics; Journal Volume: 104; Journal Issue: 4; Other Information: DOI: 10.1134/S1063776107040097; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; BORON; DIAMONDS; DOPED MATERIALS; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE GRADIENTS; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K