Growth and characterization of AuN films through the pulsed arc technique

Journal Article · Fri Feb 15 00:00:00 EST 2008 · Materials Characterization

DOI:https://doi.org/10.1016/j.matchar.2006.10.023· OSTI ID:21062189

Castillo, H A; Benavides, V J; Arango, Y C; Quintero, J H ^[1]

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1. Plasma Physics Laboratory, Departament of Physics and Chemical, Universidad Nacional de Colombia Sede Manizales AA127 (Colombia)

AuN films were produced through the PAPVD (Plasma Assisted Physics Vapor Deposition) method, using the pulsed arc technique in a mono-vaporizer noncommercial system, which consists of a chamber with two faced electrodes, and a power controlled system. In order to obtain the films, an Au Target with 99% purity and stainless steel 304 were used as target and substrate respectively. Nitrogen was injected in gaseous phase at 2.3 mbar pressure, and a discharge of 160 V was performed, supplied by the power controlled source. Au4f and N1s narrow spectra were analyzed using XPS (X-ray Photoelectron Spectroscopy)

• OSTI ID: 21062189
• Journal Information: Materials Characterization, Vol. 59, Issue 2; Other Information: DOI: 10.1016/j.matchar.2006.10.023; PII: S1044-5803(06)00320-2; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1044-5803
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTRODES
FILMS
GOLD COMPOUNDS
NITRIDES
NITROGEN
PLASMA
SPECTRA
STAINLESS STEEL-304
SURFACE COATING
VAPORS
X-RAY PHOTOELECTRON SPECTROSCOPY