AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE

Journal Article · Tue Apr 10 00:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2729770· OSTI ID:21055060

Nishiwaki, T; Yamaguchi, M; Sawaki, N ^[1]

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1. Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

• OSTI ID: 21055060
• Journal Information: AIP Conference Proceedings, Vol. 893, Issue 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729770; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
FABRICATION
GALLIUM ARSENIDES
INTERFACES
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
SUBSTRATES
TUNNEL DIODES
TUNNEL EFFECT