Site Determination of Doped Ga Ions in SrTiO3:Pr3+ Phosphor for Field Emission Displays by XAFS
Journal Article
·
· AIP Conference Proceedings
- Japan Synchrotron Radiation Research Institute, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan)
- Tokyo University of Technology, 1404-1, Katakura, Hachiohji, Tokyo 192-0982 (Japan)
The enormous enhancement of the emission intensity from SrTiO3:Pr3+ by addition of Al or Ga ions was found. In case of Al, it was reported that the emission enhancement is caused by charge compensation and reduction of planar faults in the host lattices. In order to clarify the mechanism of the enhancement of the emission from SrTiO3:Pr3+ by addition of Ga ions, we investigated the local structure of doped Ga ions in SrTiO3:Pr3+ (a red phosphor for Field Emission Display) by XAFS analysis. The XAFS analysis indicates that doped Ga ions substitute for Ti site in the crystal.
- OSTI ID:
- 21054658
- Journal Information:
- AIP Conference Proceedings, Vol. 882, Issue 1; Conference: XAFS13: 13. international conference on X-ray absorption fine structure, Stanford, CA (United States), 9-14 Jul 2006; Other Information: DOI: 10.1063/1.2644561; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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