Epitaxial growth of AlN films on single-crystalline Ta substrates
- Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
- Kanagawa Academy of Science and Technology (KAST), KSP east 301, 3-2-1, Sakado, Takatsu-ku, Kawasaki, Kanagawa 213-0012 (Japan)
We have demonstrated the first epitaxial growth of AlN films on single-crystalline Ta substrates by the use of a low-temperature growth technique based on pulsed laser deposition (PLD). Although previous AlN films grown on Ta(100) and (111) substrates have exhibited quite poor crystallinity, an epitaxial AlN(0001) film with an in-plane epitaxial relationship of AlN[112-bar 0]//Ta[001] has been obtained on a Ta(110) substrate at a growth temperature of 450 deg. C. We found that the full-width at half-maximum values for the crystal orientation distribution in the tilt and twist directions of the AlN film were 0.37{sup o} and 0.41{sup o}, respectively. Grazing-incidence X-ray reflection (GIXR) and X-ray photoelectron spectroscopy (XPS) measurements have revealed that the AlN/Ta heterointerface is quite abrupt, and that its abruptness remains unchanged even after annealing at 1000 deg. C. - Graphical abstract: An epitaxial AlN(0001) film with an in-plane epitaxial relationship of AlN[112-bar 0]//Ta[001] has been obtained for the first time on a Ta(110) substrate by the use of a PLD low-temperature growth technique.
- OSTI ID:
- 21043812
- Journal Information:
- Journal of Solid State Chemistry, Vol. 180, Issue 8; Other Information: DOI: 10.1016/j.jssc.2007.06.008; PII: S0022-4596(07)00241-1; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ALUMINIUM NITRIDES
ANNEALING
CRYSTAL GROWTH
ENERGY BEAM DEPOSITION
EPITAXY
FILMS
LASER RADIATION
MONOCRYSTALS
PULSED IRRADIATION
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
X-RAY PHOTOELECTRON SPECTROSCOPY