Electron and ion reactions with hexamethyldisiloxane and pentamethyldisiloxane
- Laboratoire 'Physique des Atomes, Lasers, Molecules et Surfaces', Equipe: 'Astrochimie Experimentale', UMR CNRS-Universite No. 6627 Batiment 11 C, Campus de Beaulieu, Universite de RENNES I, 35042 Rennes Cedex (France)
The dissociative recombination of electrons with the hexamethyldisiloxane (HMDSO) cation ((CH{sub 3}){sub 3}Si-O-Si(CH{sub 3}){sub 3}){sup +} and the pentamethyldisiloxane cation ((CH{sub 3}){sub 3}Si-O-Si(CH{sub 2}){sub 2}){sup +} as well as the ion-molecule reaction between Ar{sup +} and HMDSO have been studied at 300 K using a flowing afterglow Langmuir probe-mass spectrometer apparatus. The rate constants for these reactions, measured directly for the first time, are, respectively, {alpha}{sub 1}=1.8x10{sup -6}, {alpha}{sub 2}=3.6x10{sup -6} cm{sup 3}/s, and k=2.0x10{sup -9} cm{sup 3}/s with uncertainties of {+-}30%. In addition, the electronic attachment to neutral HMDSO was also studied and an upper limit value of the rate constant was determined to be {beta}=3.3x10{sup -11} cm{sup 3}/s.
- OSTI ID:
- 21024301
- Journal Information:
- Journal of Chemical Physics, Vol. 127, Issue 14; Other Information: DOI: 10.1063/1.2774984; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
- Country of Publication:
- United States
- Language:
- English
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