Fundamental reliability of 1.5-nm-thick silicon oxide gate films grown at 150 deg. C by modified reactive ion beam deposition
- NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)
The reliability of 1.5-nm-thick silicon oxide gate films grown at 150 deg. C by modified reactive ion beam deposition (RIBD) with in situ pyrolytic-gas passivation (PGP) using N{sub 2}O and NF{sub 3} was investigated. RIBD uses low-energy-controlled reactive, ionized species and potentializes low-temperature film growth. Although the oxide films were grown at a low temperature of 150 deg. C, their fundamental indices of reliability, such as the time-dependent dielectric breakdown lifetime and interface state density, were almost equivalent to those of oxide films grown at 850 deg. C using a furnace. This is probably due to localized interfacial N and F atoms. The number density of interfacial N atoms was about seven times larger than that for the furnace-grown oxide films, and this is a key factor for improving the reliability through the compensation of residual inconsistent-state bonding sites.
- OSTI ID:
- 21020902
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 26, Issue 1; Other Information: DOI: 10.1116/1.2812430; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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