Stranski-Krastanow growth of tensile strained Si islands on Ge (001)

Journal Article · Mon Dec 03 00:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2820605· OSTI ID:21016200

Pachinger, D; Groiss, H; Lichtenberger, H; Stangl, J; Hesser, G; Schaeffler, F ^[1]

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1. Institut fuer Halbleiter- und Festkoerperphysik, Universitaet Linz, Altenberger Strasse 69, A-4040 Linz (Austria)

Stranski-Krastanow island growth is demonstrated for tensile strained silicon epilayers on Ge (001) substrates over a wide range of growth temperatures. Small, Si-rich islands show sidewall faces near {l_brace}1,1,10{r_brace}, whereas larger islands are {l_brace}113{r_brace}-terminated truncated pyramids with an aspect ratio near 0.1. In contrast to compressively strained Ge on Si, we find for Si on Ge a significantly thicker wetting layer of >8 ML and coexistence of islands and dislocations.

• OSTI ID: 21016200
• Journal Information: Applied Physics Letters, Vol. 91, Issue 23; Other Information: DOI: 10.1063/1.2820605; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ASPECT RATIO
CRYSTAL GROWTH
DISLOCATIONS
EPITAXY
GERMANIUM
LAYERS
MOLECULAR STRUCTURE
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES