Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy
We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity.
- OSTI ID:
- 21013775
- Journal Information:
- Applied Optics, Vol. 46, Issue 31; Other Information: DOI: 10.1364/AO.46.007625; (c) 2007 Optical Society of America; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6935
- Country of Publication:
- United States
- Language:
- English
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