Ammonia sensitivity of amorphous carbon film/silicon heterojunctions

Journal Article · Mon Sep 17 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2790371· OSTI ID:21013622

Xili, Gao; Qingzhong, Xue; Lanzhong, Hao; Qingbin, Zheng; Qun, Li ^[1]

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1. College of Physics Science and Technology, China University of Petroleum, Dongying, Shandong 257061 (China)

The amorphous carbon film/n-Si (a-C/Si) junctions have been fabricated by magnetron sputtering. The results show that these junctions have good rectifying properties and high ammonia (NH{sub 3}) gas sensitivity. For a given reverse bias voltage, the resistance of the junction can increase by 100 times rapidly when exposed to NH{sub 3} gas. This phenomenon may be attributed to the change of the space charge width of the junction, which is caused by the adsorption of NH{sub 3} gas molecules. This study shows that these a-C/Si junctions have potential application as NH{sub 3} gas detect sensors.

• OSTI ID: 21013622
• Journal Information: Applied Physics Letters, Vol. 91, Issue 12; Other Information: DOI: 10.1063/1.2790371; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
AMMONIA
CARBON
DEPOSITION
ELECTRIC POTENTIAL
FILMS
HETEROJUNCTIONS
SEMICONDUCTOR MATERIALS
SENSORS
SILICON
SPACE CHARGE
SPUTTERING