Investigation of the interaction of a laser pulse with a preformed Gaussian Sn plume for an extreme ultraviolet lithography source
- Department of Mechanical and Aerospace Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0438 (United States)
The interaction of a laser pulse with a Sn preplasma formed by a low energy prepulse was investigated for an extreme ultraviolet (EUV) lithography light source. A much lower ion kinetic energy and nearly the same conversion efficiency from laser to in-band (2% bandwidth) 13.5 nm EUV light were simultaneously observed as compared with those from the direct interaction with a solid surface. The reason comes from the interaction of the laser pulse with a smooth preplume induced by the prepulse. The density profile of the preplume was measured with time-resolved shadowgraphy and could be fitted with a Gaussian function. The energy of the ions located at the flux peak E{sub p} scales with the length of the preplume l{sub s} as E{sub p}{proportional_to}1/l{sub s}. Laser absorption in the low-density preplume and ion acceleration during plasma expansion are discussed. This result provides a general way to control particle energy from a laser plasma interaction.
- OSTI ID:
- 20982628
- Journal Information:
- Journal of Applied Physics, Vol. 101, Issue 2; Other Information: DOI: 10.1063/1.2426883; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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