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Title: Amphoteric arsenic in GaN

The authors have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive {sup 73}As. They give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As{sub Ga} 'antisites' are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called miscibility gap in ternary GaAs{sub 1-x}N{sub x} compounds, which cannot be grown with a single phase for values of x in the range of 0.1<x<0.99.
Authors:
; ; ; ;  [1] ;  [2] ;  [3] ;  [2] ;  [2] ;  [4]
  1. Instituto Tecnologico e Nuclear, Estrada Nacional 10, 2686-953 Sacavem (Portugal) and Centro de Fisica Nuclear, Universidade de Lisboa, Avenida Professor Gama Pinto 2, 1649-003 Lisbon (Portugal)
  2. (Portugal)
  3. (Portugal) and CERN-PH, 1211 Geneva 23 (Switzerland)
  4. (Switzerland)
Publication Date:
OSTI Identifier:
20971903
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 18; Other Information: DOI: 10.1063/1.2736299; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANIONS; ARSENIC; ARSENIC 73; CATIONS; CHANNELING; ELECTRON EMISSION; GALLIUM NITRIDES; SEMICONDUCTOR MATERIALS; SOLUBILITY