Epitaxial integration of (0001) BiFeO{sub 3} with (0001) GaN
Abstract
Epitaxial growth of (0001)-oriented BiFeO{sub 3} thin films on the (0001) surface of GaN has been realized using intervening epitaxial (111) SrTiO{sub 3}/(100) TiO{sub 2} buffer layers. The epitaxial BiFeO{sub 3} thin films have two in-plane orientations: [1120]BiFeO{sub 3}(parallel sign)[1120]GaN plus a twin variant related by a 180 deg. in-plane rotation. BiFeO{sub 3} shows an out-of-plane remanent polarization of {approx}90 {mu}C/cm{sup 2}, which is comparable to the remanent polarization of BiFeO{sub 3} prepared on (111) SrTiO{sub 3} single crystal substrates. The orientation of BiFeO{sub 3} realized on GaN provides the maximal out-of-plane polarization of BiFeO{sub 3}, which is equivalent to a surface charge of 5x10{sup 14} electrons/cm{sup 2}.
- Authors:
-
- Department of Materials Science and Engineering, Pennsylvania State University, Pennsylvania 16802-5005 (United States)
- Publication Date:
- OSTI Identifier:
- 20971881
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 90; Journal Issue: 17; Other Information: DOI: 10.1063/1.2730580; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; BISMUTH COMPOUNDS; CRYSTAL GROWTH; ELECTRONS; FERROELECTRIC MATERIALS; GALLIUM NITRIDES; GRAIN ORIENTATION; IRON OXIDES; LAYERS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; POLARIZATION; STRONTIUM TITANATES; SUBSTRATES; THIN FILMS; TITANIUM OXIDES
Citation Formats
Tian, W, Vaithyanathan, V, Schlom, D G, Zhan, Q, Yang, S Y, Chu, Y H, Ramesh, R, and Department of Materials Science and Engineering, University of California, Berkeley, California 94720 and Department of Physics, University of California, Berkeley, California 94720. Epitaxial integration of (0001) BiFeO{sub 3} with (0001) GaN. United States: N. p., 2007.
Web. doi:10.1063/1.2730580.
Tian, W, Vaithyanathan, V, Schlom, D G, Zhan, Q, Yang, S Y, Chu, Y H, Ramesh, R, & Department of Materials Science and Engineering, University of California, Berkeley, California 94720 and Department of Physics, University of California, Berkeley, California 94720. Epitaxial integration of (0001) BiFeO{sub 3} with (0001) GaN. United States. https://doi.org/10.1063/1.2730580
Tian, W, Vaithyanathan, V, Schlom, D G, Zhan, Q, Yang, S Y, Chu, Y H, Ramesh, R, and Department of Materials Science and Engineering, University of California, Berkeley, California 94720 and Department of Physics, University of California, Berkeley, California 94720. 2007.
"Epitaxial integration of (0001) BiFeO{sub 3} with (0001) GaN". United States. https://doi.org/10.1063/1.2730580.
@article{osti_20971881,
title = {Epitaxial integration of (0001) BiFeO{sub 3} with (0001) GaN},
author = {Tian, W and Vaithyanathan, V and Schlom, D G and Zhan, Q and Yang, S Y and Chu, Y H and Ramesh, R and Department of Materials Science and Engineering, University of California, Berkeley, California 94720 and Department of Physics, University of California, Berkeley, California 94720},
abstractNote = {Epitaxial growth of (0001)-oriented BiFeO{sub 3} thin films on the (0001) surface of GaN has been realized using intervening epitaxial (111) SrTiO{sub 3}/(100) TiO{sub 2} buffer layers. The epitaxial BiFeO{sub 3} thin films have two in-plane orientations: [1120]BiFeO{sub 3}(parallel sign)[1120]GaN plus a twin variant related by a 180 deg. in-plane rotation. BiFeO{sub 3} shows an out-of-plane remanent polarization of {approx}90 {mu}C/cm{sup 2}, which is comparable to the remanent polarization of BiFeO{sub 3} prepared on (111) SrTiO{sub 3} single crystal substrates. The orientation of BiFeO{sub 3} realized on GaN provides the maximal out-of-plane polarization of BiFeO{sub 3}, which is equivalent to a surface charge of 5x10{sup 14} electrons/cm{sup 2}.},
doi = {10.1063/1.2730580},
url = {https://www.osti.gov/biblio/20971881},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 90,
place = {United States},
year = {Mon Apr 23 00:00:00 EDT 2007},
month = {Mon Apr 23 00:00:00 EDT 2007}
}