Critical film thickness dependence on As flux in In{sub 0.27}Ga{sub 0.73}As/GaAs(001) films

Journal Article · Mon Feb 26 00:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2476259· OSTI ID:20971854

Riposan, A; Mirecki Millunchick, J; Pearson, Chris ^[1]

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1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

The transition between planar and nonplanar growth is examined for compressively strained In{sub 0.27}Ga{sub 0.73}As/GaAs(001) films using reflection high energy electron diffraction, atomic force microscopy, and scanning tunneling microscopy (STM). For a narrow range of temperature and composition, the critical thickness (t{sub SK}) is strongly dependent on As flux. For high values of As flux, t{sub SK} increases by more than a factor of 2. The morphology of three-dimensional islands formed during the initial stages of nonplanar growth is also characterized by high resolution STM.

• OSTI ID: 20971854
• Journal Information: Applied Physics Letters, Vol. 90, Issue 9; Other Information: DOI: 10.1063/1.2476259; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
ELECTRON DIFFRACTION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MAGNETIC ISLANDS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
THICKNESS
THIN FILMS