Excimer laser annealing of silicon nanowires

Journal Article · Mon Mar 12 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2713774· OSTI ID:20960142

Misra, Nipun; Li, Xu; Yaoling, Pan; Cheung, Nathan; Grigoropoulos, Costas P ^[1]

---

1. Department of Mechanical Engineering, University of California, Berkeley, California 94720-1740 (United States)

Nanowires can potentially be used with low-cost flexible plastic substrates for applications such as large-area displays and sensor arrays. However, high temperature processing steps such as thermal annealing that are incompatible with plastic substrates are still a major hindrance. Laser annealing permits localized energy input without affecting the underlying substrate and can help overcome this problem. In this study, the excimer laser annealing of silicon nanowires is demonstrated to be an efficient means of activating implanted dopants. The optical absorption of the nanowires is discussed and the effect of parameters such as fluence and number of pulses is investigated.

• OSTI ID: 20960142
• Journal Information: Applied Physics Letters, Vol. 90, Issue 11; Other Information: DOI: 10.1063/1.2713774; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ANNEALING
DOPED MATERIALS
EXCIMER LASERS
PLASTICS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES