Compensating point defects in {sup 4}He{sup +}-irradiated InN

Journal Article · Tue May 15 00:00:00 EDT 2007 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.75.193201· OSTI ID:20951423

Tuomisto, F; Pelli, A; Yu, K M; Walukiewicz, W; Schaff, W J ^[1]

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1. Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 TKK (Finland)

We use positron annihilation spectroscopy to study 2 MeV {sup 4}He{sup +}-irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a rate of 3600 cm{sup -1}. The In vacancies are introduced at a significantly lower rate of 100 cm{sup -1}, making them negligible in the compensation of the irradiation-induced additional n-type conductivity in InN. On the other hand, negative non-open volume defects are introduced at a rate higher than 2000 cm{sup -1}. These defects are tentatively attributed to interstitial nitrogen and may ultimately limit the free-electron concentration at high irradiation fluences.

• OSTI ID: 20951423
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 75, Issue 19; Other Information: DOI: 10.1103/PhysRevB.75.193201; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNIHILATION
CHEMICAL VAPOR DEPOSITION
DEFECTS
ELECTRIC CONDUCTIVITY
ELECTRON DENSITY
GALLIUM NITRIDES
INDIUM NITRIDES
INTERSTITIALS
ION BEAMS
IRRADIATION
MEV RANGE 01-10
MOLECULAR BEAM EPITAXY
NITROGEN
POSITRONS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
VACANCIES