Ferroelectric dielectric properties of Ba{sub 0.5}Sr{sub 0.5}(Ti{sub 0.80}Sn{sub 0.20})O{sub 3} thin films grown by the soft chemical method

Journal Article · Sun Oct 15 00:00:00 EDT 2006 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/j.jssc.2006.06.023· OSTI ID:20900841

Souza, I A ^[1]; Simoes, A Z ^[1]; Cava, S ^[2]; Cavalcante, L S ^[3]; Cilense, M ^[1]; Longo, E ^[1]; Varela, J A ^[1]

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1. Laboratorio Interdisciplinar em Ceramica, Departamento de Fisico-quimica, Instituto de Quimica, Universidade Estadual Paulista, R. Francisco Degni, s/n, Bairro Quitandinha, CEP 14801-970 Araraquara - SP (Brazil)
2. Laboratorio Interdisciplinar de Materiais Ceramicos, Centro Interdisciplinar de Pesquisa e Pos-Graduacao, Universidade Estadual de Ponta Grossa, Av. Gal. Carlos Cavalcanti, 4748, Campus - Uvaranas, CEP 84035-900 Ponta Grossa - PR (Brazil)
3. Laboratorio Interdisciplinar de Eletroquimica e Ceramica, Departamento de Quimica, Universidade Federal de Sao Carlos, Rod. Washington Luiz, km 235, C.P. 676, CEP 13565-905 Sao Carlos - SP (Brazil)

Polycrystalline Ba{sub 0.5}Sr{sub 0.5}(Ti{sub 0.80}Sn{sub 0.20})O{sub 3} (BST:Sn) thin films with a perovskite structure were prepared by the soft chemical method on a platinum-coated silicon substrate from spin-coating technique. The resulting thin films showed a dense structure with uniforain size distribution. The dielectric constant of the films estimated from C-V curve is around 1134 and can be ascribed to a reduction in the oxygen vacancy concentration. The ferroelectric nature of the film indicated by butterfly-shaped C-V curves and confirmed by the hysteresis curve, showed remnant polarization of 14{mu}C/cm{sup 2} and coercive field of 74kV/cm at frequency of 1MHz. At the same frequency, the leakage current density at 1.0V is equal to 1.5x10{sup -7}A/cm{sup 2}. This work clearly reveals the highly promising potential of BST:Sn for application in memory devices.

• OSTI ID: 20900841
• Journal Information: Journal of Solid State Chemistry, Vol. 179, Issue 10; Other Information: DOI 10.1016/j.jssc.2006.06.023; PII: S0022-4596(06)00365-3; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM COMPOUNDS
CRYSTALLIZATION
FERROELECTRIC MATERIALS
GRAIN SIZE
LEAKAGE CURRENT
OXIDES
PERMITTIVITY
PEROVSKITE
PLATINUM
POLYCRYSTALS
SILICON
SPACE CHARGE
SPIN-ON COATING
STRONTIUM COMPOUNDS
THIN FILMS
TIN COMPOUNDS
TITANIUM COMPOUNDS
VACANCIES