Synthesis and characterization of boron-oxygen-hydrogen thin films at low temperatures
- Materials Chemistry, RWTH-Aachen, Kopernikusstr. 16, D-52074 Aachen (Germany)
- Institute of Ion Beam Physics and Materials Research, Research Center Rossendorf, P.O. Box 510119, D-01314 Dresden (Germany)
- Lehrstuhl und Institut fuer Halbleitertechnik, RWTH-Aachen, Sommerfeldstr. 24, D-52056 Aachen (Germany)
We have studied the influence of synthesis temperature on chemical composition and mechanical properties of X-ray amorphous boron-oxygen-hydrogen (B-O-H) films. These B-O-H films have been synthesized by RF sputtering of a B-target in an Ar atmosphere. Upon increasing the synthesis temperature from room temperature to 550 deg. C, the O/B and H/B ratios decrease from 0.73 to 0.15 and 0.28 to 0.07, respectively, as determined by elastic recoil detection analysis. It is reasonable to assume that potential sources of O and H are residual gas and laboratory atmosphere. The elastic modulus, as measured by nanoindentation, increases from 93 to 214 GPa, as the O/B and H/B ratios decreases within the range probed. Hence, we have shown that the effect of impurity incorporation on the elastic properties is extensive and that the magnitude of the incorporation is a strong function of the substrate temperature.
- OSTI ID:
- 20891574
- Journal Information:
- Materials Research Bulletin, Vol. 40, Issue 8; Other Information: DOI: 10.1016/j.materresbull.2005.03.030; PII: S0025-5408(05)00096-6; Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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