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Title: InAs nanowire formation on InP(001)

Abstract

The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along <110> and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands.

Authors:
; ;  [1]
  1. London Centre for Nanotechnology, Department of Chemistry, Imperial College London, London SW7 2AZ (United Kingdom)
Publication Date:
OSTI Identifier:
20884920
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 100; Journal Issue: 11; Other Information: DOI: 10.1063/1.2399326; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DEPOSITION; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MAGNETIC ISLANDS; MOLECULAR BEAM EPITAXY; NUCLEATION; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SERPENTINE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TEXTURE

Citation Formats

Parry, H J, Ashwin, M J, and Jones, T S. InAs nanowire formation on InP(001). United States: N. p., 2006. Web. doi:10.1063/1.2399326.
Parry, H J, Ashwin, M J, & Jones, T S. InAs nanowire formation on InP(001). United States. https://doi.org/10.1063/1.2399326
Parry, H J, Ashwin, M J, and Jones, T S. 2006. "InAs nanowire formation on InP(001)". United States. https://doi.org/10.1063/1.2399326.
@article{osti_20884920,
title = {InAs nanowire formation on InP(001)},
author = {Parry, H J and Ashwin, M J and Jones, T S},
abstractNote = {The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along <110> and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands.},
doi = {10.1063/1.2399326},
url = {https://www.osti.gov/biblio/20884920}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 100,
place = {United States},
year = {Fri Dec 01 00:00:00 EST 2006},
month = {Fri Dec 01 00:00:00 EST 2006}
}