Effects of N{sub 2}{sup +} ion implantation on phase transition in Ge{sub 2}Sb{sub 2}Te{sub 5} films

Journal Article · Sun Oct 15 00:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2357640· OSTI ID:20884777

Kim, Young Kuk; Baeck, J H; Cho, M -H; Jeong, E J; Ko, D -H ^[1]

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1. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)

The phase transitions of Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) films after bombardment with 40 keV N{sub 2}{sup +} ions were investigated. Comparing the nitrogen incorporated GST films with a pure GST film, the suppression of a crystalline grain growth was more effective in the N{sub 2}{sup +} implanted GST film than in a nitrogen codeposited GST film, i.e., x-ray diffraction data showed that the intensities of the crystalline diffraction peaks were decreased and the full widths at half maximum were broader than that of a pure GST film. This suppression of crystallization owing to the incorporation of nitrogen drastically reduced the roughness of surface morphology and decreased the electrical conductivity of the crystalline film. A near edge x-ray absorption fine structure experiment and x-ray photoemission spectroscopy data demonstrated that the suppression of crystalline grain growth is due to the formation of Ge{sub 3}N{sub 4} and interstitial N{sub 2} molecules. In N{sub 2}{sup +} implanted GST films, in particular, interstitial N{sub 2} molecules played a major role in the suppression of crystallization.

• OSTI ID: 20884777
• Journal Information: Journal of Applied Physics, Vol. 100, Issue 8; Other Information: DOI: 10.1063/1.2357640; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
ANTIMONIDES
CRYSTALLIZATION
ELECTRIC CONDUCTIVITY
FINE STRUCTURE
GERMANIUM NITRIDES
GERMANIUM TELLURIDES
GRAIN GROWTH
INTERSTITIALS
ION BEAMS
ION IMPLANTATION
MORPHOLOGY
NITROGEN
NITROGEN IONS
ROUGHNESS
SEMICONDUCTOR MATERIALS
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
X-RAY SPECTROSCOPY