Adjustable metal-semiconductor transition of FeS thin films by thermal annealing
- I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany)
FeS polycrystalline thin films were prepared on float glass at 500 deg. C by radio-frequency reactive sputtering. The influence of vacuum annealing on the metal-semiconductor transition of FeS films was investigated. It has been found that with the increase of the annealing temperature from 360 to 600 deg. C, the metal-semiconductor transition temperature of FeS films first decreases and then increases, associated with first a reduction and then an enhancement of hysteresis width. The thermal stress is considered to give rise to the abnormal change of the metal-semiconductor transition of the FeS film during annealing.
- OSTI ID:
- 20880198
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 26; Other Information: DOI: 10.1063/1.2424663; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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