Si{sub 1-y}C{sub y} surface alloys used as self-patterned templates for the growth of Ge dots

Journal Article · Mon Nov 13 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2387113· OSTI ID:20880152

Simon, L; Aubel, D; Kubler, L ^[1]

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1. Laboratoire de Physique et de Spectroscopie Electronique, CNRS-UMR 7014, 4, rue des Freres Lumiere 68093 Mulhouse Cedex (France)

The authors report on epitaxial growth and surface morphology of low C content Si{sub 1-y}C{sub y} alloys deposited on Si(001) (molecular beam epitaxy method). In specific kinetic conditions these alloys grow by formation and propagation of step bunches (7-10 nm high). The authors demonstrate that electromigration plays a crucial role in the spatial organization of the step bunches formed on vicinal surfaces. Compared with standard electron bombardment heating for which no order is observed, direct current heating can spatially organize giant step bunches separated by 100 nm wide terraces. Such patterned substrates have been used in order to organize Ge dots.

• OSTI ID: 20880152
• Journal Information: Applied Physics Letters, Vol. 89, Issue 20; Other Information: DOI: 10.1063/1.2387113; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DIRECT CURRENT
ELECTRONS
ELECTROPHORESIS
GERMANIUM
MOLECULAR BEAM EPITAXY
MORPHOLOGY
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SODIUM ALLOYS
SUBSTRATES