InAs/InP single quantum wire formation and emission at 1.5 {mu}m

Journal Article · Mon Dec 04 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2403928· OSTI ID:20880135

Alen, B; Fuster, D; Gonzalez, Y; Gonzalez, L; Martinez-Pastor, J ^[1]

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1. Instituto de Microelectronica de Madrid (CSIC), Isaac Newton 8, 28760 Tres Cantos (Spain)

Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 {mu}m. Additional sharp features are related to monolayer fluctuations of the two-dimensional InAs layer present during the early stages of the quantum wire self-assembling process.

• OSTI ID: 20880135
• Journal Information: Applied Physics Letters, Vol. 89, Issue 23; Other Information: DOI: 10.1063/1.2403928; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ASYMMETRY
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WIRES
RESOLUTION
SEMICONDUCTOR MATERIALS
STRESSES