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Title: Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

Abstract

The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the [111] direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots.

Authors:
; ; ; ;  [1]
  1. CNRST, 52 Bd Omar Ibn Khattab, BP 8027, Agdal, 10102 Rabat (Morocco)
Publication Date:
OSTI Identifier:
20880123
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 89; Journal Issue: 23; Other Information: DOI: 10.1063/1.2399940; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DISLOCATIONS; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NUCLEATION; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Benaissa, M, Vennegues, P, Tottereau, O, Nguyen, L, Semond, F, and CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne. Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots. United States: N. p., 2006. Web. doi:10.1063/1.2399940.
Benaissa, M, Vennegues, P, Tottereau, O, Nguyen, L, Semond, F, & CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne. Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots. United States. https://doi.org/10.1063/1.2399940
Benaissa, M, Vennegues, P, Tottereau, O, Nguyen, L, Semond, F, and CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne. 2006. "Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots". United States. https://doi.org/10.1063/1.2399940.
@article{osti_20880123,
title = {Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots},
author = {Benaissa, M and Vennegues, P and Tottereau, O and Nguyen, L and Semond, F and CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne},
abstractNote = {The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the [111] direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots.},
doi = {10.1063/1.2399940},
url = {https://www.osti.gov/biblio/20880123}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 89,
place = {United States},
year = {Mon Dec 04 00:00:00 EST 2006},
month = {Mon Dec 04 00:00:00 EST 2006}
}