Effects of silicon nanostructure evolution on Er{sup 3+} luminescence in silicon-rich silicon oxide/Er-doped silica multilayers
Abstract
The effect of silicon nanostructure evolution on Er{sup 3+} luminescence is investigated by using multilayers of 2.5 nm thin SiO{sub x} (x<2) and 10 nm thin Er-doped silica (SiO{sub 2}:Er). By separating excess Si and Er atoms into separate, nanometer-thin layers, the effect of silicon nanostructure evolution on np-Si sensitized Er{sup 3+} luminescence could be investigated while keeping the microscopic Er{sup 3+} environment the same. The authors find that while the presence of np-Si is necessary for efficient sensitization, the overall quality of np-Si layer has little effect on the Er{sup 3+} luminescence. On the other hand, intrusion of np-Si into Er-doped silica layers leads to deactivation of np-Si/Er{sup 3+} interaction, suggesting that there is a limit to excess Si and Er contents that can be used.
- Authors:
-
- Department of Physics, KAIST, 373-1 Guseong-dong, Yuseong-Gu, Daejon 305-701 (Korea, Republic of)
- Publication Date:
- OSTI Identifier:
- 20880067
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 89; Journal Issue: 18; Other Information: DOI: 10.1063/1.2364455; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ANNEALING; ATOMS; CRYSTALLIZATION; DEACTIVATION; DEPOSITION; DOPED MATERIALS; ERBIUM; ERBIUM IONS; ION BEAMS; LAYERS; NANOSTRUCTURES; PARTICLES; PHOTOLUMINESCENCE; PRECIPITATION; SILICA; SILICON; THIN FILMS
Citation Formats
Chang, Jee Soo, Jhe, Ji-Hong, Yang, Moon-Seung, Shin, Jung H, Kim, Kyung Joong, Moon, Dae Won, and Advanced Industrial Metrology Group, KRISS, Daejon 305-600. Effects of silicon nanostructure evolution on Er{sup 3+} luminescence in silicon-rich silicon oxide/Er-doped silica multilayers. United States: N. p., 2006.
Web. doi:10.1063/1.2364455.
Chang, Jee Soo, Jhe, Ji-Hong, Yang, Moon-Seung, Shin, Jung H, Kim, Kyung Joong, Moon, Dae Won, & Advanced Industrial Metrology Group, KRISS, Daejon 305-600. Effects of silicon nanostructure evolution on Er{sup 3+} luminescence in silicon-rich silicon oxide/Er-doped silica multilayers. United States. https://doi.org/10.1063/1.2364455
Chang, Jee Soo, Jhe, Ji-Hong, Yang, Moon-Seung, Shin, Jung H, Kim, Kyung Joong, Moon, Dae Won, and Advanced Industrial Metrology Group, KRISS, Daejon 305-600. 2006.
"Effects of silicon nanostructure evolution on Er{sup 3+} luminescence in silicon-rich silicon oxide/Er-doped silica multilayers". United States. https://doi.org/10.1063/1.2364455.
@article{osti_20880067,
title = {Effects of silicon nanostructure evolution on Er{sup 3+} luminescence in silicon-rich silicon oxide/Er-doped silica multilayers},
author = {Chang, Jee Soo and Jhe, Ji-Hong and Yang, Moon-Seung and Shin, Jung H and Kim, Kyung Joong and Moon, Dae Won and Advanced Industrial Metrology Group, KRISS, Daejon 305-600},
abstractNote = {The effect of silicon nanostructure evolution on Er{sup 3+} luminescence is investigated by using multilayers of 2.5 nm thin SiO{sub x} (x<2) and 10 nm thin Er-doped silica (SiO{sub 2}:Er). By separating excess Si and Er atoms into separate, nanometer-thin layers, the effect of silicon nanostructure evolution on np-Si sensitized Er{sup 3+} luminescence could be investigated while keeping the microscopic Er{sup 3+} environment the same. The authors find that while the presence of np-Si is necessary for efficient sensitization, the overall quality of np-Si layer has little effect on the Er{sup 3+} luminescence. On the other hand, intrusion of np-Si into Er-doped silica layers leads to deactivation of np-Si/Er{sup 3+} interaction, suggesting that there is a limit to excess Si and Er contents that can be used.},
doi = {10.1063/1.2364455},
url = {https://www.osti.gov/biblio/20880067},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 89,
place = {United States},
year = {Mon Oct 30 00:00:00 EST 2006},
month = {Mon Oct 30 00:00:00 EST 2006}
}