The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

Pastor, D; Cusco, R; Artus, L; Gonzalez-Diaz, G; Iborra, E; Jimenez, J; Peiro, F; Calleja, E

doi:10.1063/1.2259817

Title: The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

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Abstract

We have studied the effects of rapid thermal annealing at 1300 deg.C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si{sub 3}N{sub 4} crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3 nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.

Authors:

Pastor, D; Cusco, R; Artus, L; Gonzalez-Diaz, G; Iborra, E; Jimenez, J; Peiro, F; Calleja, E ^[1]

Institut Jaume Almera, Consell Superior d'Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., 08028 Barcelona (Spain)

Publication Date:: Tue Aug 15 00:00:00 EDT 2006

OSTI Identifier:: 20880011

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 100; Journal Issue: 4; Other Information: DOI: 10.1063/1.2259817; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ANNEALING; CATHODOLUMINESCENCE; DROPLETS; GALLIUM NITRIDES; LAYERS; MICROANALYSIS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURES; RAMAN EFFECT; RAMAN SPECTRA; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SILICON NITRIDES; SUBSTRATES; SURFACES

Citation Formats


                    Pastor, D, Cusco, R, Artus, L, Gonzalez-Diaz, G, Iborra, E, Jimenez, J, Peiro, F, Calleja, E, Departamento Fisica Aplicada III, Universidad Complutense, 28040 Madrid, Departamento Tecnologia Electronica, ETSIT, Universidad Politecnica, 28040 Madrid, Departamento Fisica de la Materia Condensada, ETSII, Universidad de Valladolid, 47011 Valladolid, Departamento Electronica, Universidad de Barcelona, 08028 Barcelona, and ISOM, Universidad Politecnica, Ciudad Universitaria, 28040 Madrid, Spain and Departamento Ingenieria Electronica, ETSIT, Universidad Politecnica, Ciudad Universitaria, 28040 Madrid. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire.  United States: N. p., 2006. 
        Web.  doi:10.1063/1.2259817.

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                    Pastor, D, Cusco, R, Artus, L, Gonzalez-Diaz, G, Iborra, E, Jimenez, J, Peiro, F, Calleja, E, Departamento Fisica Aplicada III, Universidad Complutense, 28040 Madrid, Departamento Tecnologia Electronica, ETSIT, Universidad Politecnica, 28040 Madrid, Departamento Fisica de la Materia Condensada, ETSII, Universidad de Valladolid, 47011 Valladolid, Departamento Electronica, Universidad de Barcelona, 08028 Barcelona, & ISOM, Universidad Politecnica, Ciudad Universitaria, 28040 Madrid, Spain and Departamento Ingenieria Electronica, ETSIT, Universidad Politecnica, Ciudad Universitaria, 28040 Madrid. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire.  United States.  https://doi.org/10.1063/1.2259817

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                    Pastor, D, Cusco, R, Artus, L, Gonzalez-Diaz, G, Iborra, E, Jimenez, J, Peiro, F, Calleja, E, Departamento Fisica Aplicada III, Universidad Complutense, 28040 Madrid, Departamento Tecnologia Electronica, ETSIT, Universidad Politecnica, 28040 Madrid, Departamento Fisica de la Materia Condensada, ETSII, Universidad de Valladolid, 47011 Valladolid, Departamento Electronica, Universidad de Barcelona, 08028 Barcelona, and ISOM, Universidad Politecnica, Ciudad Universitaria, 28040 Madrid, Spain and Departamento Ingenieria Electronica, ETSIT, Universidad Politecnica, Ciudad Universitaria, 28040 Madrid. 2006.  
        "The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire".  United States.  https://doi.org/10.1063/1.2259817.

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@article{osti_20880011,

  title        = {The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire},

  author       = {Pastor, D and Cusco, R and Artus, L and Gonzalez-Diaz, G and Iborra, E and Jimenez, J and Peiro, F and Calleja, E and Departamento Fisica Aplicada III, Universidad Complutense, 28040 Madrid and Departamento Tecnologia Electronica, ETSIT, Universidad Politecnica, 28040 Madrid and Departamento Fisica de la Materia Condensada, ETSII, Universidad de Valladolid, 47011 Valladolid and Departamento Electronica, Universidad de Barcelona, 08028 Barcelona and ISOM, Universidad Politecnica, Ciudad Universitaria, 28040 Madrid, Spain and Departamento Ingenieria Electronica, ETSIT, Universidad Politecnica, Ciudad Universitaria, 28040 Madrid},

  abstractNote = {We have studied the effects of rapid thermal annealing at 1300 deg.C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si{sub 3}N{sub 4} crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3 nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.},

  doi          = {10.1063/1.2259817},

  url          = {https://www.osti.gov/biblio/20880011},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 4,

  volume       = 100,

  place        = {United States},

  year         = {Tue Aug 15 00:00:00 EDT 2006},

  month        = {Tue Aug 15 00:00:00 EDT 2006}

}

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