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Title: Distributions of self-trapped hole continuums in silica glass

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2216350· OSTI ID:20879961
; ;  [1]
  1. Research Center for Advanced Photon Technology, Toyota Technological Institute 2-12-1, Hisakata, Tempaku, Nagoya 468-8511 (Japan) and Laser Physics Centre, Research School of Physical Science and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

Photobleaching of self-trapped holes (STH) in low temperature UV-irradiated silica glass has been investigated by the electron spin resonance method. The bleaching time dependence of the decay of two kinds of STH, STH{sub 1}, and STH{sub 2}, could be well fitted by the stretched exponential function, and STH{sub 2} has a quicker decay than STH{sub 1}. On the other hand, the decay becomes significant large when the photon energy increases from 1.5 to 2.0 eV, and then keeps constant with a further increase of photon energy. The distributions of the STH continuums are estimated at the positions on top of the valence band, being 1.66{+-}0.27 eV for STH{sub 1} and 1.63{+-}0.33 eV for STH{sub 2}. A possible recombination mechanism is proposed to explain the decay of STH signals.

OSTI ID:
20879961
Journal Information:
Journal of Applied Physics, Vol. 100, Issue 1; Other Information: DOI: 10.1063/1.2216350; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English