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Title: Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of {approx}6x10{sup 14} cm{sup -2}. Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.
Authors:
; ; ; ; ; ; ; ; ; ;  [1] ;  [2] ;  [2] ;  [2] ;  [3]
  1. U.S. Army Research Office, Durham, North Carolina 27709 (United States)
  2. (United States)
  3. (United Kingdom)
Publication Date:
OSTI Identifier:
20860985
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 89; Journal Issue: 15; Other Information: DOI: 10.1063/1.2357552; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; EPITAXY; EXCITATION; GADOLINIUM IONS; ION IMPLANTATION; LASERS; LAYERS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ULTRAVIOLET RADIATION