In situ investigation of the island nucleation of Ge on Si(001) using x-ray scattering methods

Journal Article · Mon Oct 02 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2358300· OSTI ID:20860973

Schuelli, T U; Richard, M -I; Renaud, G; Favre-Nicolin, V; Wintersberger, E; Bauer, G ^[1]

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1. CEA Grenoble, DRFMC/SP2M, 17 rue des martyrs, F-38054 Grenoble (France)

The growth of Ge on Si(001) is investigated in situ at 500 and 600 deg. C, combining grazing incidence diffraction, multiple wavelength anomalous diffraction, and small angle scattering. This allows probing simultaneously the island shape, strain state, composition, and the transition from wetting layer to island growth. At 500 deg. C no intermixing occurs. The wetting layer is found to decrease by one atomic layer at the onset of island nucleation. At 600 deg. C interdiffusion plays an important role in strain relaxation leading to a more stable wetting layer. Small angle scattering yields the island morphology and shows the transition from pyramids to multifacetted domes.

• OSTI ID: 20860973
• Journal Information: Applied Physics Letters, Vol. 89, Issue 14; Other Information: DOI: 10.1063/1.2358300; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GERMANIUM
LAYERS
MAGNETIC ISLANDS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NUCLEATION
SEMICONDUCTOR MATERIALS
SMALL ANGLE SCATTERING
STRESS RELAXATION
WAVELENGTHS
X-RAY DIFFRACTION